Friday, 2C-09, 12:20-12:30

All-MOCVD Technology for YBCO Layer/Buffer Layer Fabrication for Coated Conductors

A. Molodyk

M. Novozhilov, S. Street, A. Delaney, L. Castellani, and A. Ignatiev

Metal Oxide Technologies Inc., 8807 Emmott Rd., Suite 100, Houston, TX 77040
Tel.: +1(832)243-0917, fax: +1(832)243-9536, e-mail alexander.molodyk@metox.biz

The unique technology to deposit buffer and YBCO layers for coated conductors via MOCVD developed by Metal Oxide Technologies Inc. represents one of the lowest possible capital and operational cost approaches to coated conductor manufacturing. An overview of the current state of MetOx technology will be given. Modular design of the prototype production MOCVD system allows for either in-line or parallel fabrication of any number of buffer layers and YBCO layers. The system is operated in air-to-air, reel-to-reel mode. World class results of Jc = 3.34 MA/cm², Ic = 480 A/cm on short samples, and Ic > 300 A/cm on 1+ m long tapes have been achieved in MOCVD YBCO on established buffer layer architectures. In addition, Ic > 130 A/cm has been reproducibly demonstrated on a proprietary all-MetOx all-MOCVD architecture, which is being rigorously advanced. Further, research activities focused on pinning enhancement, thick YBCO films and ultra-fast MOCVD growth will also be discussed.

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